Vishay / Siliconix
SIHFS11N50A-GE3
MOSFET 600V Vds E Series D2PAK TO-263
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFET
- Series
- SIHFS
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
24 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 500 V
- Id - Continuous Drain Current
- 11 A
- Rds On - Drain-Source Resistance
- 520 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 52 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 170 W
Show more parameters (12)
- Configuration
- Single
- Channel Mode
- Enhancement
- Height
- 4.83 mm
- Length
- 10.67 mm
- Transistor Type
- MOSFET
- Width
- 9.65 mm
- Forward Transconductance - Min
- 6.1 S
- Fall Time
- 28 ns
- Rise Time
- 35 ns
- Typical Turn-Off Delay Time
- 32 ns
- Typical Turn-On Delay Time
- 14 ns
- Unit Weight
- 0.077603 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.