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Infineon Technologies

BGB 707L7ESD E6327

RF Amplifier RF BIP TRANSISTORS

Basic Information

View Datasheet ↗
Manufacturer
Infineon
Brand
Infineon Technologies
Product Category
RF Amplifier
Series
BGB707L7
Package
TSLP-7-1
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

15 parameters
Type
Low Noise Amplifier
Operating Frequency
2.3 GHz to 2.7 GHz
P1dB - Compression Point
8 dBm
Gain
27 dB
Operating Supply Voltage
3 V
NF - Noise Figure
0.7 dB
Test Frequency
1.5 GHz
OIP3 - Third Order Intercept
19.5 dBm
Operating Supply Current
10 mA
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
100 mW
Supply Voltage - Max
4 V
Show more parameters (3)
Supply Voltage - Min
1.8 V
Part # Aliases
BGB707L7ESDE6327XTSA1 BGB77L7ESDE6327XT SP000531308
Unit Weight
0.000056 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

BGB 707L7ESD E6327 Specifications and Datasheet | ChipSourceHub