Central Semiconductor
PN3566 TRA TIN/LEAD
Bipolar Transistors - BJT NPN 40Vcbo 30Vceo 5.0Vebo 600mA 625mW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- PN3566
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Reel
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 1 V
- Pd - Power Dissipation
- 625 mW
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 600 mA
- DC Collector/Base Gain hfe Min
- 80 at 10 V, 2 mA
Show more parameters (1)
- DC Current Gain hFE Max
- 600 at 10 V, 10 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.