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MUN5335DW1T1G

Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP

Basic Information

View Datasheet ↗
Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - Pre-Biased
Series
MUN5335DW1
Package
SC-88-6
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

16 parameters
Configuration
Dual
Transistor Polarity
NPN, PNP
Typical Input Resistor
2.2 kOhms
Typical Resistor Ratio
0.047
DC Collector/Base Gain hfe Min
80
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
0.1 A
Peak DC Collector Current
100 mA
Pd - Power Dissipation
187 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
80 at 5 mA at 10 V
Show more parameters (4)
Height
0.9 mm
Length
2 mm
Width
1.25 mm
Number of Channels
2 Channel

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MUN5335DW1T1G Specifications and Datasheet | ChipSourceHub