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Vishay Semiconductors

SIA430DJT-T1-GE3

MOSFETs 20V Vds 20V Vgs Thin PowerPAK SC-70

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay Semiconductors
Product Category
MOSFETs
Series
SIA
Package
SC-70-6
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

17 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
20 V
Id - Continuous Drain Current
12 A
Rds On - Drain-Source Resistance
13.5 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
1 V
Qg - Gate Charge
18 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
19.2 W
Show more parameters (5)
Channel Mode
Enhancement
Tradename
TrenchFET
Configuration
Single
Country of Origin
US
Unit Weight
0.001741 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SIA430DJT-T1-GE3 Specifications and Datasheet | ChipSourceHub