onsemi
KSC5502DTM
Bipolar Transistors - BJT NPN Triple Diffused Planar Silicon
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- KSC5502D
- Package
- DPAK-3 (TO-252-3)
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 2 A
- Collector- Emitter Voltage VCEO Max
- 600 V
- Collector- Base Voltage VCBO
- 1.2 kV
- Emitter- Base Voltage VEBO
- 12 V
- Collector-Emitter Saturation Voltage
- 400 mV
- Pd - Power Dissipation
- 87.83 W
- Gain Bandwidth Product fT
- 11 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 2 A
Show more parameters (3)
- Country of Origin
- CN
- DC Collector/Base Gain hfe Min
- 14
- Unit Weight
- 0.009184 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.