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ROHM Semiconductor

RW4C045BCTCL1

MOSFETs DFN1616 P-CH 20V 4.5A

Basic Information

View Datasheet ↗
Manufacturer
ROHM Semiconductor
Product Category
MOSFETs
Package
DFN-1616-7T
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

22 parameters
Technology
Si
Transistor Polarity
P-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
20 V
Id - Continuous Drain Current
4.5 A
Rds On - Drain-Source Resistance
56 mOhms
Vgs - Gate-Source Voltage
- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage
1.5 V
Qg - Gate Charge
6.5 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
1.5 W
Show more parameters (10)
Channel Mode
Enhancement
Configuration
Single
Country of Origin
TH
Fall Time
30 ns
Forward Transconductance - Min
4.4 S
Rise Time
36 ns
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
50 ns
Typical Turn-On Delay Time
9 ns
Part # Aliases
RW4C045BC

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

RW4C045BCTCL1 Specifications and Datasheet | ChipSourceHub