NXP Semiconductors
AFT31150NR5
RF MOSFET Transistors 150W 2700-3100MHz
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Series
- AFT31150N
- Package
- OM-780-2L
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 1.8 A
- Vds - Drain-Source Breakdown Voltage
- - 500 mV, 65 V
- Gain
- 17 dB
- Output Power
- 150 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Operating Frequency
- 2700 MHz to 3100 MHz
- Type
- RF Power MOSFET
- Number of Channels
- 1 Channel
- Moisture Sensitive
- Yes
Show more parameters (5)
- Pd - Power Dissipation
- 741 W
- Vgs - Gate-Source Voltage
- - 6 V, 10 V
- Vgs th - Gate-Source Threshold Voltage
- 1.2 V
- Part # Aliases
- 935346512578
- Unit Weight
- 0.108683 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.