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NXP / Freescale

MRFE6S9125NR1

RF MOSFET Transistors HV6E 125W

Basic Information

View Datasheet ↗
Manufacturer
NXP
Brand
NXP / Freescale
Product Category
RF MOSFET Transistors
Series
MRFE6S9125N
Package
TO-270-4
Mounting Style
SMD/SMT
Packaging
Reel
RoHS
E

Technical Specifications

19 parameters
Transistor Polarity
N-Channel
Technology
Si
Vds - Drain-Source Breakdown Voltage
- 500 mV, 66 V
Gain
20.2 dB
Output Power
27 W
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Configuration
Single
Height
2.64 mm
Length
17.58 mm
Operating Frequency
880 MHz
Width
9.07 mm
Show more parameters (7)
Number of Channels
1 Channel
Channel Mode
Enhancement
Moisture Sensitive
Yes
Vgs - Gate-Source Voltage
- 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage
2.1 V
Part # Aliases
935314059528
Unit Weight
0.058073 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MRFE6S9125NR1 Specifications and Datasheet | ChipSourceHub