Toshiba
RN1110MFV,L3F
Bipolar Transistors - Pre-Biased Bias Resistor Built-in Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- RN1110MFV
- Package
- SOT-723-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
10 parameters- Configuration
- Single
- Transistor Polarity
- NPN
- Typical Input Resistor
- 4.7 kOhms
- DC Collector/Base Gain hfe Min
- 120
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- 100 mA
- Pd - Power Dissipation
- 150 mW
- Maximum Operating Temperature
- + 150 C
- Emitter- Base Voltage VEBO
- 5 V
- Number of Channels
- 1 Channel
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.