ROHM Semiconductor
EM6M2T2R
MOSFET 1.2V Drive Nch+Pch MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFET
- Series
- EM6M2
- Package
- SOT-563-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
21 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel, P-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 200 mA
- Rds On - Drain-Source Resistance
- 1 Ohms, 1.2 Ohms
- Vgs th - Gate-Source Threshold Voltage
- 300 mV
- Vgs - Gate-Source Voltage
- 4 V, - 4.5 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 150 mW
- Configuration
- Dual
Show more parameters (9)
- Channel Mode
- Enhancement
- Product
- MOSFET Small Signal
- Transistor Type
- 1 N-Channel MOSFET, 1 P-Channel MOSFET
- Fall Time
- 10 ns, 17 ns
- Rise Time
- 10 ns, 4 ns
- Typical Turn-Off Delay Time
- 15 ns, 17 ns
- Typical Turn-On Delay Time
- 5 ns, 6 ns
- Part # Aliases
- EM6M2
- Unit Weight
- 0.000106 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.