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NXP / Freescale

MRF6V2150NBR1

RF MOSFET Transistors VHV6 150W

Basic Information

View Datasheet ↗
Manufacturer
NXP
Brand
NXP / Freescale
Product Category
RF MOSFET Transistors
Series
MRF6V2150N
Package
TO-272-4
Mounting Style
SMD/SMT
Packaging
Reel
RoHS
E

Technical Specifications

19 parameters
Transistor Polarity
N-Channel
Technology
Si
Vds - Drain-Source Breakdown Voltage
110 V
Gain
25 dB
Output Power
150 W
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Configuration
Single Dual Drain Dual Gate
Height
2.64 mm
Length
23.67 mm
Operating Frequency
220 MHz
Type
RF Power MOSFET
Show more parameters (7)
Width
9.07 mm
Channel Mode
Enhancement
Moisture Sensitive
Yes
Vgs - Gate-Source Voltage
- 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage
1.62 V
Part # Aliases
935316841528
Unit Weight
0.067412 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MRF6V2150NBR1 Specifications and Datasheet | ChipSourceHub