onsemi
NSVT807CMTWFTBG
Bipolar Transistors - BJT GENERAL PURPOSE TRANSISTOR PNP, 45 V, 500 MA
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- NST807
- Package
- XDFNW-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 1 A
- Collector- Emitter Voltage VCEO Max
- 45 V
- Collector- Base Voltage VCBO
- 45 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 700 mV
- Pd - Power Dissipation
- 350 mW
- Gain Bandwidth Product fT
- 360 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (4)
- Continuous Collector Current
- 500 mA
- Country of Origin
- MY
- DC Collector/Base Gain hfe Min
- 250 at - 100 mA, - 1 V
- DC Current Gain hFE Max
- 600 at - 100 mA, - 1 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.