Infineon Technologies
BGB 741L7ESD E6327
RF Amplifier RF BIP TRANSISTORS
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- RF Amplifier
- Series
- BGB741L7
- Package
- TSLP-7-1
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Type
- ESD-Robust Broadband LNA MMIC
- Operating Frequency
- 50 MHz to 5.5 GHz
- P1dB - Compression Point
- - 6.5 dBm
- Gain
- 20 dB
- Operating Supply Voltage
- 3 V
- NF - Noise Figure
- 1.05 dB
- Test Frequency
- 1.5 GHz
- OIP3 - Third Order Intercept
- 1 dBm
- Operating Supply Current
- 10 mA
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Number of Channels
- 1 Channel
Show more parameters (5)
- Pd - Power Dissipation
- 120 mW
- Supply Voltage - Max
- 4 V
- Supply Voltage - Min
- 1.8 V
- Part # Aliases
- BGB741L7ESDE6327XT BGB741L7ESDE6327XTSA1 SP000442946
- Unit Weight
- 0.000071 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.