Central Semiconductor
2N1131B TIN/LEAD
Bipolar Transistors - BJT PNP 50Vcbo 35Vceo 5.0Vebo 45pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N1131B
- Package
- TO-39-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
10 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 35 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Gain Bandwidth Product fT
- 50 MHz
- DC Collector/Base Gain hfe Min
- 20 at 150 mA, 10 V
- DC Current Gain hFE Max
- 45 at 150 mA, 10 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.