ON Semiconductor
NST30010MXV6T1G
Bipolar Transistors - BJT DUAL MATCHED GP XTT PNP
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- NST30010MXV6
- Package
- SOT-563-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector- Base Voltage VCBO
- 30 V
- Emitter- Base Voltage VEBO
- 5 V
- Maximum DC Collector Current
- 0.1 A
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Height
- 0.55 mm
- Length
- 1.6 mm
- Width
- 1.2 mm
Show more parameters (4)
- Continuous Collector Current
- 0.1 A
- DC Collector/Base Gain hfe Min
- 270 at 10 uA, 5 V, 420 at 2 mA, 5 V
- Pd - Power Dissipation
- 661 mW
- Unit Weight
- 0.000106 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.