Nexperia
PBSS9110X,135
Bipolar Transistors - BJT LO VCESAT(BISS)TRANS
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- UPAK-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 120 V
- Emitter- Base Voltage VEBO
- 5 V
- Maximum DC Collector Current
- 1 A
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 150 at 1 mA, 5 V
- Height
- 1.6 mm
- Length
- 4.6 mm
Show more parameters (5)
- Width
- 2.6 mm
- DC Collector/Base Gain hfe Min
- 150 at 1 mA, 5 V, 150 at 250 mA, 5 V, 150 at 500 mA, 5 V, 125 at 1 A, 5 V
- Pd - Power Dissipation
- 2000 mW
- Qualification
- AEC-Q101
- Part # Aliases
- /T3 PBSS9110X
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.