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ON Semiconductor

2SC6082-1E

Bipolar Transistors - BJT BIP NPN 15A 50V

Basic Information

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Manufacturer
ON Semiconductor
Product Category
Bipolar Transistors - BJT
Series
2SC6082
Package
TO-220FP-3
Mounting Style
Through Hole
Packaging
Tube
RoHS
Compliant (source record)

Technical Specifications

13 parameters
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
50 V
Collector- Base Voltage VCBO
60 V
Emitter- Base Voltage VEBO
6 V
Collector-Emitter Saturation Voltage
200 mV
Maximum DC Collector Current
20 A
Gain Bandwidth Product fT
195 MHz
DC Current Gain hFE Max
560
Continuous Collector Current
15 A
DC Collector/Base Gain hfe Min
200
Pd - Power Dissipation
23 W
Show more parameters (1)
Unit Weight
0.081130 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

2SC6082-1E Specifications and Datasheet | ChipSourceHub