Infineon Technologies
BFR 182 E6327
RF Bipolar Transistors NPN Silicon RF TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- RF Bipolar Transistors
- Series
- BFR182
- Package
- SOT-23
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
22 parameters- Transistor Type
- Bipolar
- Technology
- Si
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 70
- Collector- Emitter Voltage VCEO Max
- 12 V
- Emitter- Base Voltage VEBO
- 2 V
- Continuous Collector Current
- 0.035 A
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Collector- Base Voltage VCBO
- 20 V
- DC Current Gain hFE Max
- 70 at 10 mA at 8 V
Show more parameters (10)
- Height
- 1 mm
- Length
- 2.9 mm
- Operating Frequency
- 8000 MHz
- Type
- RF Bipolar Small Signal
- Width
- 1.3 mm
- Gain Bandwidth Product fT
- 8000 MHz
- Maximum DC Collector Current
- 0.035 A
- Pd - Power Dissipation
- 250 mW
- Part # Aliases
- BFR182E6327HTSA1 BFR182E6327XT SP000011051
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.