Central Semiconductor
2N4399
Bipolar Transistors - BJT PNP Power SW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N4399
- Package
- TO-3-2
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Transistor Polarity
- PNP
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Collector-Emitter Saturation Voltage
- 4 V
- Maximum DC Collector Current
- 30 A
- Gain Bandwidth Product fT
- 4 MHz
- Continuous Collector Current
- 30 A
- DC Collector/Base Gain hfe Min
- 15 at 15 A
- Pd - Power Dissipation
- 200 W
- Part # Aliases
- 2N4399 PBFREE
- Unit Weight
- 0.225789 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.