Toshiba
RN1106MFV,L3F
Bipolar Transistors - Pre-Biased BRT NPN Single 100mA IC 50V VCEO
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- RN1106MFV
- Package
- SOT-723-3
- Mounting Style
- SMD/SMT
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Configuration
- Single
- Transistor Polarity
- NPN
- Typical Input Resistor
- 4.7 kOhms
- Typical Resistor Ratio
- 0.1
- DC Collector/Base Gain hfe Min
- 80
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- 100 mA
- Pd - Power Dissipation
- 150 mW
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Emitter- Base Voltage VEBO
- 5 V
- Channel Mode
- Enhancement
Show more parameters (1)
- Maximum DC Collector Current
- 100 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.