Central Semiconductor
CMXT3906 TR TIN/LEAD
Bipolar Transistors - BJT 40Vcbo 40Vceo 5.0Vebo 200mA 350mW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- CMXT3906
- Package
- SOT-26-6
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 250 mV
- Pd - Power Dissipation
- 350 mW
- Gain Bandwidth Product fT
- 250 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 200 mA
Show more parameters (3)
- Country of Origin
- KR
- DC Collector/Base Gain hfe Min
- 60 at 0.1 mA, 1 V
- DC Current Gain hFE Max
- 300 at 10 mA, 1 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.