Central Semiconductor
BC547B
Bipolar Transistors - BJT NPN 50Vcbo 50 Vceo 800mA 625mW Trans
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- BC547
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Not compliant (source record)
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 45 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 250 mV
- Maximum DC Collector Current
- 200 mA
- Gain Bandwidth Product fT
- 300 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 450 at 2 mA, 5 V
Show more parameters (5)
- Continuous Collector Current
- 100 mA
- DC Collector/Base Gain hfe Min
- 125
- Pd - Power Dissipation
- 500 mW
- Part # Aliases
- BC547B TIN/LEAD
- Unit Weight
- 0.016000 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.