Vishay / Siliconix
SIA433EDJ-T1-GE3
MOSFET -20V Vds 12V Vgs PowerPAK SC-70
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFET
- Series
- SIA
- Package
- PowerPAK-SC70-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- E
Technical Specifications
25 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 12 A
- Rds On - Drain-Source Resistance
- 15 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1.2 V
- Vgs - Gate-Source Voltage
- 12 V
- Qg - Gate Charge
- 75 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 19 W
Show more parameters (13)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- TrenchFET, PowerPAK
- Height
- 0.75 mm
- Length
- 2.05 mm
- Transistor Type
- 1 P-Channel
- Width
- 2.05 mm
- Forward Transconductance - Min
- 35 S
- Fall Time
- 3.5 us
- Rise Time
- 0.6 us
- Typical Turn-Off Delay Time
- 10 us
- Typical Turn-On Delay Time
- 0.3 us
- Part # Aliases
- SIA433EDJ-GE3
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.