Microchip Technology
MSCSM120XM50CTYZBNMG
Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-6HPD
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- Discrete Semiconductor Modules
- Package
- 108 mm x 67.3 mm x 17.2 mm
- Mounting Style
- Screw Mount
Technical Specifications
18 parameters- Product
- MOSFET-SiC SBD Modules
- Type
- 3-Phase Bridge
- Technology
- SiC
- Vf - Forward Voltage
- 1.5 V
- Vgs - Gate-Source Voltage
- - 10 V, + 23 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Country of Origin
- PH
- Fall Time
- 25 ns
- Id - Continuous Drain Current
- 80 A
- Pd - Power Dissipation
- 315 W
- Rds On - Drain-Source Resistance
- 50 mOhms
Show more parameters (6)
- Rise Time
- 30 ns
- Transistor Polarity
- N-Channel
- Typical Turn-Off Delay Time
- 50 ns
- Typical Turn-On Delay Time
- 30 ns
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Vgs th - Gate-Source Threshold Voltage
- 2.7 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.