ON Semiconductor
2SD1803S-E
Bipolar Transistors - BJT LOW-SATURATION VOLTAGE
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SD1803
- Package
- TO-251-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 220 mV, - 280 mV
- Maximum DC Collector Current
- 8 A, - 8 A
- Gain Bandwidth Product fT
- 180 MHz, 130 MHz
- Maximum Operating Temperature
- + 150 C
- Height
- 7 mm
- Length
- 6.5 mm
- Width
- 2.3 mm
Show more parameters (4)
- Continuous Collector Current
- 5 A
- DC Collector/Base Gain hfe Min
- 55
- Pd - Power Dissipation
- 1 W
- Unit Weight
- 0.009185 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.