Toshiba
2SD1223(TE16L1,NQ)
Bipolar Transistors - BJT NPN VCEO 80V VCE 1.5 Ic 4A hFE 2000 min
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SD1223
- Package
- TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Maximum DC Collector Current
- 4 A
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 4 A
- DC Collector/Base Gain hfe Min
- 2000
- Pd - Power Dissipation
- 15 W
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.