NXP Semiconductors
MHT1108NT1
RF MOSFET Transistors RF Power LDMOS Transistor for Consumer and Commercial Cooking, 2450 MHz, 12.5 W CW, 28 V
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Series
- MHT1108N
- Package
- DFN-16
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
15 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 143 mA
- Vds - Drain-Source Breakdown Voltage
- - 500 mV, 65 V
- Gain
- 18.1 dB
- Output Power
- 12.5 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Operating Frequency
- 2450 MHz
- Type
- RF Power MOSFET
- Pd - Power Dissipation
- 32.9 W
- Vgs - Gate-Source Voltage
- - 6 V, 10 V
Show more parameters (3)
- Vgs th - Gate-Source Threshold Voltage
- 0.8 V
- Part # Aliases
- 935337042515
- Unit Weight
- 0 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.