onsemi
NJVMJB41CT4G
Bipolar Transistors - BJT BIP NPN 6A 100V TR
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- MJB41C
- Package
- D2PAK-3
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
19 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 6 A
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 1.5 V
- Pd - Power Dissipation
- 65 W
- Gain Bandwidth Product fT
- 3 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (7)
- Qualification
- AEC-Q100
- Country of Assembly
- MY
- Country of Diffusion
- MY
- Country of Origin
- MY
- DC Collector/Base Gain hfe Min
- 20 at 500 mA, 10 V
- DC Current Gain hFE Max
- 75 at 3 A, 4 V
- Unit Weight
- 0.079014 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.