STMicroelectronics
RF3L05250CB4
RF MOSFET Transistors 250 W 28/32 V RF power LDMOS transistor from HF to 1 GHz
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- RF MOSFET Transistors
- Package
- LBB-5
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
16 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 2.5 A
- Vds - Drain-Source Breakdown Voltage
- 90 V
- Rds On - Drain-Source Resistance
- 1 Ohms
- Operating Frequency
- 1 MHz
- Gain
- 18 dB
- Output Power
- 250 W
- Maximum Operating Temperature
- + 200 C
- Country of Origin
- CN
- Number of Channels
- 1 Channel
- Pd - Power Dissipation
- 250 W
Show more parameters (4)
- Type
- RF Power MOSFET
- Vgs - Gate-Source Voltage
- + 10 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
- Unit Weight
- 0.084658 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.