ROHM Semiconductor
SCT2280KEC
MOSFET MOSFET1200V14A280m OhmSiliconCarbideSiC
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFET
- Series
- SCT2x
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
22 parameters- Technology
- SiC
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1200 V
- Id - Continuous Drain Current
- 14 A
- Rds On - Drain-Source Resistance
- 280 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1.6 V
- Vgs - Gate-Source Voltage
- - 6 V, 22 V
- Qg - Gate Charge
- 36 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 108 W
Show more parameters (10)
- Configuration
- Single
- Channel Mode
- Enhancement
- Transistor Type
- 1 N-Channel
- Forward Transconductance - Min
- 1.4 S
- Fall Time
- 29 ns
- Rise Time
- 19 ns
- Typical Turn-Off Delay Time
- 47 ns
- Typical Turn-On Delay Time
- 19 ns
- Part # Aliases
- SCT2280KE
- Unit Weight
- 1.340411 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.