NXP Semiconductors
AFT09MS007NT1
RF MOSFET Transistors LANDMOBILE 7W PLD1.5W
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Package
- PLD-1.5
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Vds - Drain-Source Breakdown Voltage
- 400 mV, 30 V
- Gain
- 15.2 dB
- Output Power
- 7.3 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Operating Frequency
- 870 MHz
- Type
- RF Power MOSFET
- Moisture Sensitive
- Yes
- Pd - Power Dissipation
- 114 W
- Vgs - Gate-Source Voltage
- - 6 V, 12 V
Show more parameters (3)
- Vgs th - Gate-Source Threshold Voltage
- 2.1 V
- Part # Aliases
- 935318254515
- Unit Weight
- 0.009877 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.