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Diodes Incorporated

APT17NTR-G1

Bipolar Transistors - BJT 480V NPN High Volt Bvces 700V 10Vebo

Basic Information

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Manufacturer
Diodes Incorporated
Product Category
Bipolar Transistors - BJT
Series
APT17
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

13 parameters
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
700 V
Emitter- Base Voltage VEBO
10 V
Maximum DC Collector Current
100 mA
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
36.5 at 100 uA, 20 V
Continuous Collector Current
50 mA
DC Collector/Base Gain hfe Min
21 at 100 uA, 20 V
Moisture Sensitive
Yes
Pd - Power Dissipation
200 mW
Show more parameters (1)
Unit Weight
0.000282 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

APT17NTR-G1 Specifications and Datasheet | ChipSourceHub