Infineon Technologies
IMBG40R011M2HXTMA1
SiC MOSFETs SILICON CARBIDE MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- SiC MOSFETs
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
21 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 400 V
- Id - Continuous Drain Current
- 133 A
- Rds On - Drain-Source Resistance
- 14.4 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 4.5 V
- Qg - Gate Charge
- 85 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 429 W
- Channel Mode
- Enhancement
- Configuration
- Single
Show more parameters (9)
- Country of Origin
- AT
- Fall Time
- 9.3 ns
- Product
- SiC MOSFETS
- Rise Time
- 18.3 ns
- Technology
- SiC
- Type
- G2 MOSFET
- Typical Turn-Off Delay Time
- 29.8 ns
- Typical Turn-On Delay Time
- 15.8 ns
- Part # Aliases
- IMBG40R011M2H SP005976260
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.