Central Semiconductor
PN4356
Bipolar Transistors - BJT PNP Gen Pur SW
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- PN43
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.5 V
- Gain Bandwidth Product fT
- 100 MHz
- Height
- 5.33 mm
- Length
- 5.21 mm
- Width
- 4.19 mm
- Continuous Collector Current
- 0.45 A
- DC Collector/Base Gain hfe Min
- 50
Show more parameters (3)
- Pd - Power Dissipation
- 625 mW
- Part # Aliases
- PBFREE PN4356
- Unit Weight
- 0.016000 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.