ON Semiconductor
2SD1618T-TD-E
Bipolar Transistors - BJT BIP NPN 0.7A 15V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SD1618
- Package
- TO-243-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 15 V
- Collector- Base Voltage VCBO
- 20 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 80 mV
- Gain Bandwidth Product fT
- 250 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 560
- Continuous Collector Current
- 0.7 A
- DC Collector/Base Gain hfe Min
- 60
Show more parameters (1)
- Pd - Power Dissipation
- 1.3 W
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.