onsemi
2SD1060S-1E
Bipolar Transistors - BJT BIP NPN 5A 50V
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SD1060
- Package
- TO-220AB-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 5 A
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 300 mV
- Pd - Power Dissipation
- 1.75 W
- Gain Bandwidth Product fT
- 30 MHz
- Maximum Operating Temperature
- + 150 C
- Country of Origin
- KR
Show more parameters (1)
- Unit Weight
- 0.063493 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.