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ON Semiconductor / Fairchild

KSC815YTA

Bipolar Transistors - BJT NPN Epitaxial Transistor

Basic Information

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Manufacturer
ON Semiconductor
Brand
ON Semiconductor / Fairchild
Product Category
Bipolar Transistors - BJT
Series
KSC815
Package
TO-92-3 Kinked Lead
Mounting Style
Through Hole
Packaging
Ammo Pack
RoHS
Compliant (source record)

Technical Specifications

20 parameters
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
45 V
Collector- Base Voltage VCBO
60 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
0.15 V
Maximum DC Collector Current
0.2 A
Pd - Power Dissipation
400 mW
Gain Bandwidth Product fT
200 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
400
Show more parameters (8)
Height
4.7 mm
Length
4.7 mm
Technology
Si
Width
3.93 mm
Continuous Collector Current
0.2 A
DC Collector/Base Gain hfe Min
40
Part # Aliases
KSC815YTA_NL
Unit Weight
0.008466 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

KSC815YTA Specifications and Datasheet | ChipSourceHub