Central Semiconductor
PN5132 TIN/LEAD
Bipolar Transistors - BJT NPN 20Vcbo 20Vceo 3.0Vebo 10mA 3.5pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- PN5132
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
9 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Base Voltage VCBO
- 20 V
- Emitter- Base Voltage VEBO
- 3 V
- Collector-Emitter Saturation Voltage
- 2 V
- Gain Bandwidth Product fT
- 200 MHz
- DC Collector/Base Gain hfe Min
- 30 at 10 V, 10 mA
- DC Current Gain hFE Max
- 400 at 10 V, 10 mA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.