Vishay Semiconductors
MXP120A250FW-GE3
SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay Semiconductors
- Product Category
- SiC MOSFETs
- Series
- MXP120A
- Package
- TO-247-3
- Mounting Style
- Through Hole
Technical Specifications
22 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 10.5 A
- Rds On - Drain-Source Resistance
- 313 mOhms
- Vgs - Gate-Source Voltage
- - 10 V, + 22 V
- Vgs th - Gate-Source Threshold Voltage
- 3.1 V
- Qg - Gate Charge
- 20.3 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 56 W
- Channel Mode
- Enhancement
Show more parameters (10)
- Tradename
- MaxSIC
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 15 ns
- Product
- SiC MOSFETS
- Rise Time
- 11.5 ns
- Technology
- SiC
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 9.5 ns
- Typical Turn-On Delay Time
- 10 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.