STMicroelectronics
PD20010TR-E
RF MOSFET Transistors RF power tran LdmoST N-chann
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- RF MOSFET Transistors
- Series
- PD20010-E
- Package
- PowerSO-10RF-Formed-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 5 A
- Vds - Drain-Source Breakdown Voltage
- 40 V
- Gain
- 11 dB
- Output Power
- 10 W
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Operating Frequency
- 2 GHz
- Type
- RF Power MOSFET
- Moisture Sensitive
- Yes
- Pd - Power Dissipation
- 59 W
Show more parameters (2)
- Vgs - Gate-Source Voltage
- 15 V
- Unit Weight
- 0.105822 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.