Central Semiconductor
2N6487 PBFREE
Bipolar Transistors - BJT NPN 70Vcbo 60Vceo 5.0Vebo
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N64
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 70 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 3.5 V
- Pd - Power Dissipation
- 1.8 W
- Gain Bandwidth Product fT
- 5 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 15 A
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 20 at 5 A, 4 V
- DC Current Gain hFE Max
- 150 at 5 A, 4 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.