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NXP / Freescale

A2T14H450-23NR6

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1452-1511 MHz, 93 W Avg., 31 V

Basic Information

View Datasheet ↗
Manufacturer
NXP
Brand
NXP / Freescale
Product Category
RF MOSFET Transistors
Package
OM-1230-4L2S
Mounting Style
SMD/SMT
Packaging
Cut Tape

Technical Specifications

15 parameters
Transistor Polarity
Dual N-Channel
Technology
Si
Id - Continuous Drain Current
3 A
Vds - Drain-Source Breakdown Voltage
- 500 mV, 65 V
Gain
18.8 dB
Output Power
93 W
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 150 C
Operating Frequency
1452 MHz to 1511 MHz
Type
RF Power MOSFET
Number of Channels
2 Channel
Vgs - Gate-Source Voltage
- 6 V, 10 V
Show more parameters (3)
Vgs th - Gate-Source Threshold Voltage
1.05 V
Part # Aliases
935316214528
Unit Weight
0.186677 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

A2T14H450-23NR6 Specifications and Datasheet | ChipSourceHub