ON Semiconductor
2SA2210-1E
Bipolar Transistors - BJT BIP PNP 20A 50V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SA2210
- Package
- TO-220FP-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 50 V
- Collector- Base Voltage VCBO
- - 50 V
- Emitter- Base Voltage VEBO
- - 6 V
- Collector-Emitter Saturation Voltage
- - 200 mV
- Maximum DC Collector Current
- - 20 A
- Gain Bandwidth Product fT
- 140 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 450
- DC Collector/Base Gain hfe Min
- 150
- Pd - Power Dissipation
- 30 W
Show more parameters (1)
- Unit Weight
- 0.068784 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.