Toshiba
TBC847B,LM
Bipolar Transistors - BJT BJT NPN 0.15A 50V
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- TBC8X7
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 170 mV
- Maximum DC Collector Current
- 150 mA
- Gain Bandwidth Product fT
- 100 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 450 at 2 mA, 5 V
- Continuous Collector Current
- 150 mA
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 200
- Pd - Power Dissipation
- 320 mW
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.