Diodes Incorporated
APT27HZTR-G1
Bipolar Transistors - BJT NPN 450Vceo 0.8A 0.8w 0.5mV 700Vces
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- APT27
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Ammo Pack
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 450 V
- Emitter- Base Voltage VEBO
- 9 V
- Collector-Emitter Saturation Voltage
- 500 mV
- Maximum DC Collector Current
- 1.6 A
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 40 at 100 mA, 10 V
- Continuous Collector Current
- 0.8 A
- DC Collector/Base Gain hfe Min
- 6 at 300 mA, 10 V
- Pd - Power Dissipation
- 800 mW
Show more parameters (1)
- Unit Weight
- 0.016000 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.