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Microchip / Microsemi

JANTX2N918UB/TR

Bipolar Transistors - BJT BJTs

Basic Information

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Manufacturer
Microchip
Brand
Microchip / Microsemi
Product Category
Bipolar Transistors - BJT
Package
LCC-3
Mounting Style
SMD/SMT
RoHS
Not compliant (source record)

Technical Specifications

13 parameters
Technology
Si
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
15 V
Collector- Base Voltage VCBO
30 V
Emitter- Base Voltage VEBO
3 V
Collector-Emitter Saturation Voltage
0.4 V
Maximum DC Collector Current
50 mA
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 200 C
DC Current Gain hFE Max
200 at 3 mA, 1 V
DC Collector/Base Gain hfe Min
10 at 500 uA, 10 V
Show more parameters (1)
Pd - Power Dissipation
200 mW

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

JANTX2N918UB/TR Specifications and Datasheet | ChipSourceHub