onsemi
2SA2210-EPN-1E
Bipolar Transistors - BJT BIP PNP 20A 50V
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SA2210
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
12 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 20 A
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 200 mV
- Pd - Power Dissipation
- 30 W
- Gain Bandwidth Product fT
- 140 MHz
- Maximum Operating Temperature
- + 150 C
- Country of Origin
- KR
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.