Nexperia
MJD45H11AJ
Bipolar Transistors - BJT MJD45H11A/SOT428/DPAK
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- DPAK-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
15 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 80 V
- Collector- Base Voltage VCBO
- - 80 V
- Emitter- Base Voltage VEBO
- - 6 V
- Collector-Emitter Saturation Voltage
- - 1 V
- Maximum DC Collector Current
- - 16 A
- Pd - Power Dissipation
- 20 W
- Gain Bandwidth Product fT
- 80 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Technology
- Si
Show more parameters (3)
- Continuous Collector Current
- - 8 A
- DC Collector/Base Gain hfe Min
- 60
- Part # Aliases
- 934660552118
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.