NXP Semiconductors
MRFX1K80HR5
RF MOSFET Transistors 65V LDMOS Transistor
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Series
- MRFX1K80
- Package
- NI-1230H-4
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- Dual N-Channel
- Technology
- Si
- Id - Continuous Drain Current
- 43 A
- Vds - Drain-Source Breakdown Voltage
- - 500 mV, 179 V
- Gain
- 25.1 dB
- Output Power
- 1.8 kW
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Operating Frequency
- 1.8 MHz to 400 MHz
- Type
- RF Power MOSFET
- Forward Transconductance - Min
- 44.7 S
- Number of Channels
- 2 Channel
Show more parameters (5)
- Pd - Power Dissipation
- 2247 W
- Vgs - Gate-Source Voltage
- - 6 V, 10 V
- Vgs th - Gate-Source Threshold Voltage
- 2.1 V
- Part # Aliases
- 935351859178
- Unit Weight
- 0.464156 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.